? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?15 march 5 , 2000-02 features current transfer ratio ?SFH6916, 50%?00% sop (small outline package) isolation test voltage, 3750 v rms (1.0 s) high collector-emitter voltage, v ceo =70 v low saturation voltage fast switching times field-effect stable by trios (transparent ion shield) temperature stable low coupling capacitance end-stackable, 0.050" (1.27 mm) spacing underwriters lab file #52744 description the SFH6916 family has a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 16 pin 50 mil lead pitch mini?t package. it features a high current transfer ratio, low coupling capacitance, and high isolation voltage. the coupling devices are designed for signal transmis- sion between two electrically separated circuits. SFH6916 phototransistor optocoupler quad mini?t package . absolute maximum ratings, t a =25 c (except where noted) emitter reverse voltage ................................................................................ 6.0 v dc forward current........................................................................ 50 ma surge forward current ( t p 10 ?) ..................................................... 2.5 a total power dissipation per channel ..............................................80 mw detector collector-emitter voltage ................................................................... 70 v emitter-collector voltage .................................................................. 7.0 v collector current............................................................................. 50 ma collector current ( t p 1.0 ms) ........................................................ 100 ma total power dissipation per channel ............................................150 mw package isolation test voltage between emitter and detector (1.0 s)..................................................................... 3750 v rms creepage.................................................................................. 5.33 mm clearance ................................................................................. 5.08 mm comparative tracking index per din iec 112/vde0 303, part 1 ................................................. 175 isolation resistance v io =500 v, t a =25 c ................................................................. 10 12 ? v io =500 v, t a =100 c ............................................................... 10 11 ? storage temperature range .............................................. ?5 to +125 c ambient temperature range ............................................. ?5 to +100 c junction temperature ......................................................................100 c soldering temperature (max. 10 s dip soldering distance to seating plane 1.5 mm) ............................................260 c total power dissipation..................................................................70 mw 0.19 (4.83) 0.17 (4.32) 0.434 (11.02) 0.414 (10.52) 0.034 (0.87) 0.024 (0.61) 0.018 (0.46) 0.014 (0.36) 0.000 (0.00) 0.005 (0.13) 0.055 (1.40) 0.045 (1.14) 0.017 (0.43) 0.013 (0.33) 0.220 (5.59) 0.200 (5.08) 40 10 0.008 (0.20) 0.004 (0.10) 0.280 (7.11) 0.260 (6.60) 0.200 (5.08) 0.220 (5.59) 0.080 (2.03) 0.075 (1.91) 1 2 emitter collector anode cathode 15 16 3 4 emitter collector anode cathode 13 14 5 6 emitter collector anode cathode 11 12 7 8 emitter collector anode cathode 9 10 dimensions in inches (mm)
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca SFH6916 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?16 march 5 , 2000-02 table 1. electrical characteristics, t a =25 c (except where noted) switching times (typical) figure 1. switching operation (without saturation) table 2. i c =2.0 ma, v cc =10 v, t a =25 c description symbol min. typ. max. unit condition emitter (ir gaas) forward voltage v f 1.15 1.4 v i f =5 ma reverse current i r 0.01 10 a v r =6.0 v capacitance c o 14 pf v r =0.0 v, f=1.0 mhz thermal resistance r thja 1000 k/w detector (si phototransistor) leakage current, collector-emitter i ceo 100 na v ce =20 v capacitance c ce 2.8 pf v ce =5.0 v, f=1.0 mhz thermal resistance r thja 500 k/w package collector-emitter saturation voltage v cesat 0.1 0.4 v i f =20 ma, i c =1.0 ma coupling capacitance c c 1.0 pf f=1.0 mhz current transfer ratio ctr 50 300 % i f =5.0 ma, v cc =5.0 v parameter symbol value unit load resistance r l 100 ? rise time t r 4.0 s fall time t f 3.0 turn on time t on 5.0 turn off time t off 4.0 50 ? i f i c v cc =10 v r l =100 ? figure 2. switching operation (with saturation) table 3. i f =16.0 ma, v cc =5.0 v, t a =25 c parameter symbol value unit load resistance r l 1.9 k ? rise time t r 15 s fall time t f 0.5 turn on time t on 1.0 turn off time t off 30 50 ? i f i c v cc =5 v r l =1.9 k ?
? 2001 in neon technologies corp. optoelectronics division san jose, ca SFH6916 www.in neon.com/opto 1-888-in neon (1-888-463-4636) 2 317 march 5 , 2000-02 figure 3. diode forward voltage vs. forward current figure 4. collector current vs. collector emitter voltage figure 5. collector to emitter dark current vs. ambient temperature forward voltage, v f (v) forward current, i f (ma) 0.01 0.10 1.00 10.00 100.00 1.6 1.4 1.1 0.9 0.6 t= 25 c t= 55 c t=0 c t=50 c t=75 c t=100 c t=25 c 80 70 60 50 40 30 20 10 0 0246810 collector to emitter voltage, v ce (v) i f =30 ma collector current, i c (ma) i f =20 ma i f =5 ma i f =10 ma i f =15 ma collector to emitter dark current,iceo (na) ambient temperature, t a ( c) 1000.0 100.0 10.0 1.0 60 40 20 0 20 40 60 80 100 12 v 24 v 40 v figure 6. collector current vs. collector-emitter saturation voltage figure 7. normalized output current vs. ambient temperature figure 8. normalized output current vs. ambient temperature collector current (ma) collector-emitter saturation voltage, v ce (sat)(v) 100.000 10.000 1.000 0.100 0.010 0.001 0.0 0.2 0.4 0.6 0.8 1.0 i f =25 ma i f =10 ma i f =5.0 ma i f =2.0 ma i f =1.0 ma normalized output current, ctr 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ambient temperature, t a ( c) 60 40 20 0 20 40 60 80 100 normalized to 1.0 at t a =25 c i f =1.0 ma, v ce =5.0 v ambient temperature, t a ( c) normalized to 1.0 at t a =25 c i f =1.0 ma, v ce =5.0 v normalized output current, ctr 1.2 1.0 0.8 0.6 0.4 0.2 0.0 60 40 20 0 20 40 60 80 100
? 2001 in neon technologies corp. optoelectronics division san jose, ca SFH6916 www.in neon.com/opto 1-888-in neon (1-888-463-4636) 2 318 march 5 , 2000-02 figure 9. current transfer ratio vs. forward current figure 10. switching time vs. load resistance figure 11. switching time vs. load resistance current transfer ratio, ctr (%) forward current, i f (ma) 300 250 200 150 100 50 0 0.1 1.0 10.0 50 100.0 v ce =5.0 v typical for ctr=250% typical for ctr=150% switching time, ( s) v cc =5.0 v i c =2.0 ma load resistance, r l (ohm) 100. 0 10.0 1.0 0.1 0 500 1000 1500 2000 ton toff td ts switching time, ( s) load resistance, r l ( ? ) 1000 100 10 1 0 100 1000 10000 100000 i f =5.0 ma v cc =5.0 v t a =25 c ctr=150% t r t d t s t f figure 12. switching time measurement t off t r t pdon t on t d t f 10% 50% 90% output input 10% 50% 90% t s t pdoff
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